The complete V-I characteristics of a diode is the combination of its forward as well as reverse characteristics.
In forward characteristics, it is seen that initially forward current is small as long as the bias voltage is less than the barrier potential.
At a certain voltage close to barrier potential, current increases rapidly. The voltage at which diode current starts increasing rapidly is called as cut in voltage. It is denoted by V
Below this voltage, current is less than 1% of maximum rated value of diode current. The cut-in voltage for germanium is about 0.2V while for silicon it is 0.6 V.
The voltage at which breakdown occurs is called reverse breakdown voltage denoted as VBR
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